Part Number
|
PFF13N50 |
Manufacturer
|
Power Device |
Description
|
500V N-Channel MOSFET |
Published
|
Jan 13, 2015 |
Detailed Description
|
Feb 2009
PFP13N50/PFF13N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremel...
|
Datasheet
|
PFF13N50
|
Overview
Feb 2009
PFP13N50/PFF13N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
46 Ω (Typ.
) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFP13N50/PFF13N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on)typ = 0.
46 Ω ID = 12.
5 A
Drain {
Gate
{
●
◀▲
● ●
Source
{
TO-220
TO-220F
1 2 3
1.
Gate 2.
Drain 3.
Source
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise speci...
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