BSX61

BSX60 : .

BSX60 : .

BSX61 : NPN switching transistor in a TO-39 metal package. 1 handbook, halfpage 2 BSX59; BSX61 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time BSX59 BSX61 Tamb ≤ 25 °C IC = 500 mA; VCE = 1 V IC = 50 mA; VCE = 10 V; f = 100 MHz ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − − 60 100 ns ns open emitter open base CONDITIONS − − − − 30 250 MIN. MAX. 70 45 1 800 − − MHz V V A mW UNIT 1997 May 22 2 Phil.

BSX62 : NPN switching transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BSX62; BSX63 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSX62 BSX63 VCEO collector-emitter voltage BSX62 BSX63 IC Ptot hFE collector current (DC) total power dissipation DC current gain BSX62-10; BSX63-10 BSX62-16; BSX63-16 fT toff transition frequency turn-off time IC = 200 mA; VCE = 10 V; f = 100 MHz ICon = 1 A; IBon = 50 mA; IBoff = −50 mA Tcase ≤ 25 °C IC = 1 A; VCE = 1 V 63 100 30 − 100 160 70 − 160 250 − 1.5 MHz µs open base − − − − − − − − 40 60 3 5 V.

BSX62 : .

BSX62 : NPN BSX62-BSX63 SWITCHING TRANSISTORS C The BSX62 and BSX63 are NPN switching transistors mounted in TO-39 metal package. They are intended for use in medium power switching. High current and low voltage. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value BSX62 40 60 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC ICM IBM PD TJ Tamb TStg Ratings Collector-Emitter Voltage IB =0 Collector-Base Voltage IE =0 Emitter-Base Voltage IC =0 Collector Current Collector Peak Current Base Peak Current Total Power Dissipation Tamb = 25° Junction Temperature Operating ambient temperature Storage Temperature range BSX63 60 80 Unit V V V A A mA W °C 5 3 3 500 5 200 -65 to +150 -65 to +150 THERMAL .

BSX62SMD : BSX62SMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60 (0.142) Max. 4.14 (0.163) 3.84 (0.151) Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications 1 3 0.76 (0.030) min. 16.02 (0.631) 15.73 (0.619) Bipolar NPN Device. VCEO = 40V IC = 3A 10.69 (0.421) 10.39 (0.409) 2 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 0.50 (0.020) 0.26 (0.010) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications www.DataSheet.net/ SMD1 (TO276AB) PINOUTS 1 – Base 2 – Collector 3 – Emitte.

BSX62SMD05 : BSX62SMD05 Dimensions in mm (inches). 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 3.05 (0.120) Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications 1 3 10.16 (0.400) 0.76 (0.030) min. 5.72 (.225) 2 Bipolar NPN Device. VCEO = 40V 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) IC = 3A 0.50 (0.020) max. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications www.DataSheet.net/ SMD0.5 (TO276AA) PINOUTS 1 – Base 2 – Collector 3 – Emitter Parameter VCEO* IC(CONT) hFE ft PD .

BSX63 : NPN switching transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BSX62; BSX63 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSX62 BSX63 VCEO collector-emitter voltage BSX62 BSX63 IC Ptot hFE collector current (DC) total power dissipation DC current gain BSX62-10; BSX63-10 BSX62-16; BSX63-16 fT toff transition frequency turn-off time IC = 200 mA; VCE = 10 V; f = 100 MHz ICon = 1 A; IBon = 50 mA; IBoff = −50 mA Tcase ≤ 25 °C IC = 1 A; VCE = 1 V 63 100 30 − 100 160 70 − 160 250 − 1.5 MHz µs open base − − − − − − − − 40 60 3 5 V.

BSX63 : .

BSX63 : NPN BSX62-BSX63 SWITCHING TRANSISTORS C The BSX62 and BSX63 are NPN switching transistors mounted in TO-39 metal package. They are intended for use in medium power switching. High current and low voltage. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Value BSX62 40 60 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC ICM IBM PD TJ Tamb TStg Ratings Collector-Emitter Voltage IB =0 Collector-Base Voltage IE =0 Emitter-Base Voltage IC =0 Collector Current Collector Peak Current Base Peak Current Total Power Dissipation Tamb = 25° Junction Temperature Operating ambient temperature Storage Temperature range BSX63 60 80 Unit V V V A A mA W °C 5 3 3 500 5 200 -65 to +150 -65 to +150 THERMAL .

BSX63-10 : BSX63-10 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 3A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° www.DataSheet.net/ TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 60 3 Uni.

BSX63-6 : BSX63-6 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 45V 5.08 (0.200) typ. IC = 3A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° www.DataSheet.net/ TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 45 3 Unit.

BSX63SMD : BSX63SMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60 (0.142) Max. 4.14 (0.163) 3.84 (0.151) Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications 1 3 0.76 (0.030) min. 16.02 (0.631) 15.73 (0.619) Bipolar NPN Device. VCEO = 60V IC = 3A 10.69 (0.421) 10.39 (0.409) 2 9.67 (0.381) 9.38 (0.369) 11.58 (0.456) 11.28 (0.444) 0.50 (0.020) 0.26 (0.010) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications www.DataSheet.net/ SMD1 (TO276AB) PINOUTS 1 – Base 2 – Collector 3 – Emitte.