GP800DDS12
GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Replaces October 1999 version, DS5172-3.
0 DS5172-4.
0 January 2000
The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar
transistor (IGBT) module.
Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.
The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.
Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
The IGBT has a wide reverse bias saf...