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Part Number
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GP801DDS18 |
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Manufacturer
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Dynex Semiconductor |
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Title
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Dual Switch Low VCE(SAT) IGBT Module |
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Description
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GP801DDS18
GP801DDS18
Dual Switch Low VCE(SAT) IGBT Module
Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001
FEATURES
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Features
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Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 800A 1600A
APPLICATIONS
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12(C2) 2(C2) 4(E2) 1...
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Published
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Mar 23, 2005 |
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Datasheet
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GP801DDS18 PDF File
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