Power
Transistors
2SB949, 2SB949A
Silicon
PNP epitaxial planar type Darlington
0.
7±0.
1
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
10.
0±0.
2 5.
5±0.
2
Unit: mm
4.
2±0.
2 2.
7±0.
2
4.
2±0.
2
s Features
16.
7±0.
3 7.
5±0.
2
q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB949 base voltage 2SB949A
VCBO
–60 –80
V
14.
0±0.
5 Solder Dip 4.
0
φ3.
1±0.
1
1.
3±0.
2 1.
4±0.
1
0.
8±0.
1
0.
5 +0.
2 –0.
1
2.
54±0.
25
Collector to 2SB949
emitter voltage 2SB949A
Emitter to base voltage
Peak collector curr...