ST25N10
N Channel Enhancement Mode MOSFET
25.
0A
DESCRIPTION
ST25N10 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252
FEATURE
100V/12.
0A, RDS(ON) = 40mΩ @VGS = 10V
100V/10.
0A, RDS(ON) = 45mΩ @VGS =4.
5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252 package d...