Part Number
|
IXTQ200N075T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avala...
|
Datasheet
|
IXTQ200N075T
|
Overview
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.
0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
75 75
± 20
200 75
540
25 750
V V
V
A A A
A mJ
3 V/ns
430 W
-55 .
.
.
+175 175
-55 .
.
.
...
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