Part Number
|
IXTC220N075T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
Preliminary Technical Information
TrenchMVTM
IXTC220N075T
Power MOSFET
(Electrically Isolated Back Surface)
N-Chann...
|
Datasheet
|
IXTC220N075T
|
Overview
Preliminary Technical Information
TrenchMVTM
IXTC220N075T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 115 5.
0
V A mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
75 75
± 20
V V
V
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
115 A 75 A
600 A
25 A 1.
0 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.
3 Ω
TC = 25°C
3 V/ns
150
-55 .
.
.
+175 175
-55 .
.
.
+175
W
°C °C °C
1.
6 mm (0.
062 in.
) from case for 10 s P...
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