Part Number
|
IXTQ230N085T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ...
|
Datasheet
|
IXTQ230N085T
|
Overview
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ230N085T
VDSS = ID25 =
RDS(on) ≤
85 230 4.
4
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤IDM, di/dt ≤100 A/ms, VDD ≤VDSS TJ ≤175°C, RG = 3.
3Ω TC = 25°C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
85 V 85 V
G DS
(TAB)
± 20
230 75
520
40 1.
0
3
V
A A A
A J
V/ns
TO-3P (IX...
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