Part Number
|
IXTA130N10T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
10...
|
Datasheet
|
IXTA130N10T
|
Overview
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.
1mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263
Maximum Ratings
100 100
± 30
130 75
350
65 500
360
-55 .
.
.
+175 175
-55 .
.
.
+175
300 260
1.
13 / 10
3.
0 2.
5
V V
V
A A A
A mJ
W
°C °C °C
°C °C
Nm/lb.
in.
g g
Symbol
Test Conditions
(TJ = 2...
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