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Part Number
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IXTA130N10T7 |
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Manufacturer
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IXYS Corporation |
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Description
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Power MOSFET |
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Published
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Feb 13, 2015 |
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Detailed Description
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TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1...
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Datasheet
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IXTA130N10T7
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Overview
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.
1mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL T
SOLD
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS VGS(th)
VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
© 2008 IXYS CORPORATION,...
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