Part Number
|
IXTA160N10T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP1...
|
Datasheet
|
IXTA160N10T
|
Overview
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA160N10T IXTP160N10T
VDSS = ID25 =
RDS(on) ≤
100 160 7.
0
V A mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings
100 100
± 30
160 75
430
25 500
V V
V
A A A
A mJ
3 V/ns
430
-55...
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