|
Part Number
|
IXTC200N10T |
|
Manufacturer
|
IXYS Corporation |
|
Title
|
Power MOSFET |
|
Description
|
TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Ra...
|
|
Features
|
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy ...
|
|
Published
|
Feb 13, 2015 |
|
Datasheet
|
IXTC200N10T PDF File
|
Features
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC...
Similar Datasheet
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