Part Number
|
IXTH200N10T |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Feb 13, 2015 |
Detailed Description
|
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ...
|
Datasheet
|
IXTH200N10T
|
Overview
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P
Maximum Ratings 100 100
V V
± 30 V
200 A 75 A 500 A
40 A 1.
5 J
550 W
-55 .
.
.
+175 175
-55 .
.
.
+175
300 260
1.
13 / 10
°C °C °C
°C °C
Nm/lb.
in.
6.
0 g 5.
5 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)...
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