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D111

Part Number D111
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Feb 18, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissi...
Datasheet D111




Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 80 V 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous IB Base Current-Continuous -10 A 3A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ isc website:w...






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