INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and
regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage
80 V 10 V
IC Collector Current-Continuous
10 A
IE Emitter Current-Continuous IB Base Current-Continuous
-10 A 3A
PC
Collector Power Dissipation @TC=25℃
100
W
TJ Junction Temperature Tstg Storage Temperature
150 ℃ -65~150 ℃
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