TTK2837
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type ( -MOS )
TTK2837
Switching
Regulator Applications
• Low drain-source on-resistance: RDS(ON) = 0.
22 Ω (typ.
) • High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) • Low leakage current: IDSS = 10 µA (VDS = 500 V) • Enhancement mode: Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.
9 MAX.
3.
2 ± 0.
2
2.
0 1.
0 9.
0 4.
5
20.
0 ± 0.
3
3.
3 MAX.
2.
0
20.
5 ± 0.
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanch...