PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
UPA810T
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.
25 mm package
• LOW NOISE FIGURE: NF = 1.
2 dB TYP at 1 GHz
• HIGH GAIN: |S21E|2 = 9.
0 dB TYP at 1 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
• HIGH COLLECTOR CURRENT: 100 mA
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View) 2.
1 ± 0.
1 1.
25 ± 0.
1
0.
65 2.
0 ± 0.
2
1.
3
1 2
6
0.
2 (All Leads) 5
DESCRIPTION The UPA810T is two
NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each
transistor is independently mounted and easily configured for either dual
transistor or cascode ope...