Transistors
2SB1260 / 2SB1181 / 2SB1241
Power
Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
5.
5−+00.
.
13 1.
5±0.
3 0.
9 1.
5
2.
5 9.
5±0.
5
!Features 1) High breakdown voltage and high
current.
BVCEO= −80V, IC=−1A 2) Good hFE linearity.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1863 / 2SD1733.
!Structure Epitaxial planar type
PNP silicon
transistor
!External dimensions (Units : mm)
2SB1260
4.
5+−00.
.
12 1.
6±0.
1
1.
5−+00.
.
12
2SB1181
6.
5±0.
2 5.
1+−00.
.
12
C0.
5
2.
3+−00.
.
12 0.
5±0.
1
0.
5±0.
1
4.
0 ±0.
3 2.
5−+00.
.
12
1.
0±0.
2
(1) (2) (3)
0.
4±0.
1 1.
5±0.
1
0.
5±0.
1 3.
0±0.
2
0.
4±0.
1 1.
5±0.
1
ROHM : MPT3 EIAJ : SC-62
Abbreviated
∗symbol: BH
0.
4−+00.
.
015
0.
75 0.
9
0.
65±0.
1
2.
3±0.
2 2.
3±0.
2
0...