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VS-GB90DA120U
Vishay Semiconductors
Insulated Gate Bipolar
Transistor (Ultrafast IGBT), 90 A
SOT-227
PRIMARY CHARACTERISTICS
VCES IC DC VCE(on) typical at 75 A, 25 °C Speed
1200 V 90 A at 90 °C
3.
3 V 8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
BENEFITS • Designed for increased op...