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VS-GT175DA120U
Vishay Semiconductors
Insulated Gate Bipolar
Transistor (Trench IGBT), 175 A
SOT-227
PRODUCT SUMMARY
VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed
1200 V 175 A at 90 °C (1)
1.
73 V 32 A at 90 °C 8 kHz to 30 kHz
Package
SOT-227
Circuit
Single switch diode
Note
(1) Maximum collector current admitted is 100 A, to not exceed the maximum temperature of terminals
FEATURES • Trench IGBT technology with positive
temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse
recovery • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry...