Ordering number:EN5387
FX901
DC-DC Converter Applications
Features
· Composite type with a
PNP transistor and a 2.
5V drive N-channel MOSFET with a built-in low forward-voltage
Schottky barrier diode faciliteting high-density mounting.
PNP Epitaxial Planar Silicon
Transistor N-Channel MOS Silicon FET Silicon
Schottky Barrier Diode
Package Dimensions
unit:mm 2133
[FX901]
Electrical Connection
1:Base 2:Emitter 3:Anode, Source 4:Gate 5, 6:Common (Collector, Cathode, Drain) SANYO:XP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Allowable Power Dissipation Total Power Dissipation Storage Temperature [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage E...