Naina Semiconductor Ltd.
MUR10005CT thru MUR10020CTR Features Super Fast Recovery Diode, 100A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR10005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 100 400 MUR10010CT(R) 100 70 100 100 400 MUR10020CT(R) 200 140 200 100 400 Units V V V A A Electrical Characteristics (TJ = 25oC un...

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