MOSFETs Silicon N-channel MOS (U-MOS-H)
TPW4R50ANH
1.
Applications
• DC-DC Converters • Switching Voltage
Regulators • Motor Drivers
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 3.
7 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA)
3.
Packaging and Internal Circuit
TPW4R50ANH
DSOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2015-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-09
2019-10-21 Rev.
4.
0
TPW4R50ANH
4.
Absolute Maximum Ratings (Note) (Ta = 25 unle...