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TPH11006NL

Part Number TPH11006NL
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 7, 2015
Datasheet TPH11006NL




Features
(1) High-speed switching (2) Small gate charge: QSW = 6.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V...






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