N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
ME25N06(-G)
FEATURES
● RDS(ON)≦62mΩ@VGS=10V ● RDS(ON)≦86mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resi...