DISCRETE SEMICONDUCTORS
DATA SHEET
MX1011B200Y Microwave power
transistor
Product specification Supersedes data of January 1995
1997 Feb 18
Philips Semiconductors
Microwave power
transistor
Product specification
MX1011B200Y
FEATURES
• Suitable for short and medium pulse applications up to 100 µs pulse width, 10% duty factor
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing reduces thermal resistance
• Internal input and output prematching networks allow an easier design of...