LUP12N65 / LUF12N65
650V N-Channel Enhancement Mode MOSFET
Product General Description
These enhancement mode power filed effect
transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy.
These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.
Features
12A , 650V, RDS(ON)=0.
8Ω@VGS=10V, ID=6.
0A
• Low On-state Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current
Marking and Order Information
TYPE LUP12N65 LUF12N65
MARKING P12N65 F12N65
PACKAGE TO-220 TO-220F
PACKING 50PCS/TUBE 50PCS/TUBE
Absolute Maximum Ratings and T...