2SK1119
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSII.
5)
2SK1119
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance : RDS (ON) = 3.
0 Ω (typ.
)
z High forward transfer admittance : |Yfs| = 2.
0 S (typ.
)
z Low leakage current
: IDSS = 300 µA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.
5~3.
5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg...