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Part Number
|
PFW20N50 |
|
Manufacturer
|
Power Device |
|
Description
|
500V N-Channel MOSFET |
|
Published
|
Mar 23, 2015 |
|
Detailed Description
|
Aug 2006
PFW20N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Int...
|
|
Datasheet
|
PFW20N50
|
Overview
Aug 2006
PFW20N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 90 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
20 Ω (Typ.
) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFW20N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) = 0.
25 Ω ID = 20 A
TO-247
Drain {
Gate
{
●
◀▲
● ●
Source
{
TO-3P
1 2 3
1.
Gate 2.
Drain 3.
Source
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Valu...
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