NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.
5% IMD — - 32.
5 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power
Features
• Integrated ESD Protection
• Designed...