2SD2603(3DD2603)
NPN /SILICON
NPN TRANSISTOR
:。
Purpose: Power out amplifier applications.
:,。 Features: High VCEO,low V .
CE(sat)
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO 100 V
VCEO 100 V
VEBO 5.
0 V
IC 5.
0 A
PC 2.
0 W
PC(TC=25℃)
40 W
Tj 150 ℃
Tstg -55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
ICBO IEBO hFE VCE(sat) fT
VCB=100V VEB=5.
0V VCE=5.
0V IC=3.
0A VCE=5.
0V
IE=0 IC=0 IC=1.
0A* IB=0.
3A* IC=500mA f=1.
0MHz
Min
60 10
Rating
Typ
Max
20
20
200
1.
0
Unit
μA μA
V MHz
*:/pulse test.
hFE /hFE classifications: R:60~120 O:100~200
FOSHAN BLUE ROCKET ELECTRONICS CO.
, LTD.
2SD2603(3DD2603)
FOSHAN BLUE ROCKET ELECTRONICS CO.
...