■■APPLICATION: Power supplies, relay drivers, lamp drivers, electrical equipment.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
-30 V
Collector-emitter voltage
VCEO
-25 V
Emitter-base voltage
VEBO
-6 V
Collector current
IC -2 A
Collector Power Dissipation
PC 750 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150℃
B926
—
PNP silicon —
■■ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
TEST CONDITION
DC Current Gain
hFE 100
560 VCE= -2V,Ic= -100mA
Collector Cut-off Current
ICBO
-0.
1 µA VCB=-20 V,IE=0
Emitter Cut-off Current
IEBO
-0.
1 µA VEB= -4V,Ic=0
Collector-Base Breakdown Vol...