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Part Number
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STH310N10F7-6 |
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Manufacturer
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STMicroelectronics |
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Description
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N-CHANNEL Power MOSFET |
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Published
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Apr 3, 2015 |
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Detailed Description
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STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
22
Power MOSFET in H PAK-2 and...
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Datasheet
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STH310N10F7-6
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Overview
STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.
9 mΩ typ.
, 180 A STripFET™ VII DeepGATE™
22
Power MOSFET in H PAK-2 and H PAK-6 packages
Datasheet - production data
Features
TAB
2 3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1.
Internal schematic diagram
Order codes
VDS RDS(on) max.
ID
STH310N10F7-2 100 V
STH310N10F7-6
2.
3 mΩ
180 A
• Ultra low on-resistance • 100% avalanche tested
Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Order codes STH310N10F7-2 STH310N10F7-6
Table 1.
Device summa...
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