INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
2SD458
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Power Dissipation-
: PC= 80W(Max)@TC=25℃
APPLICATIONS ·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE= 50Ω
VCEO
Collector-Emitter Voltage
600 V
600
www.
DataSheet.
co.
kr
V
400 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
2A
IBM Base Current-Peak
PC
Collector Power Dissipation @TC=25...