DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS
2SA950
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for low-frequency power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating -35 -30 -5 -800 600 +150
-55 to +150
Unit V V V mA
mW oC oC
TO-92
.
190(4.
83) .
170(4.
33)
.
190(4.
83) .
170(4.
33)
.
500 (12.
70)
Min
2o Typ 2o Typ
.
050 (1.
27)Typ
.
022(0.
56) .
014(0.
36)
.
100 (2.
54)
Typ
.
022(0.
56) .
0...