JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-126 Plastic-Encapsulate
Transistors
2SB649/2SB649A
TRANSISTOR (
PNP)
TO- 126
FEATURES Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1.
EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2.
COLLECTOR
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-180
V
3.
BASE
VCEO
Collector-Emitter Voltage
2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-1.
5
A
PC Collector Power Dissipation
1
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
BDTICELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol T...