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H1270

Part Number H1270
Manufacturer Huashan
Description PNP SIlicon Transistor
Published Apr 13, 2015
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICON TRANSISTOR H1270 █ CENERAL PURPOSE APPLICATION. SWITCHING APPL...
Datasheet H1270





Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
PNP SILICON TRANSISTOR H1270 █ CENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW VCBO——Collector-Base Voltage………………………………-35V VCEO——Collector-Emitter Voltage……………………………-30V VEBO——Emitter-Base Voltage………………………………-5V IC——Collector Current……………………………………-500mA TO-92 1―Emitter,E 2―Collector,C 3―Base,B █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current -100 nA VCB=-35V, IE=0 IEBO Emitter Cut-off Current -10...






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