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IPD50N06S2L-13

Part Number IPD50N06S2L-13
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet IPD50N06S2L-13





Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD50N06S2L-13 Product Summary V DS R DS(on),max (SMD version) ID 55 V 12.
7 mΩ 50 A PG-TO252-3-11 Type IPD50N06S2L-13 Package Marking PG-TO252-3-11 PN06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50A Gate source voltage V GS Power...






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