Part Number A1270
Manufacturer SEMTECH
Title PNP Silicon Transistor
Description ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O ...
Features ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at
  –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 25 40 - - - - - - - - - 0.1 0.8 200 13 G S P FORM...

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Datasheet A1270 PDF File

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A1273 : TO-92 Plastic-Encapsulate Transistors 2SA1273 TRANSISTOR (PNP) FEATURES Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value -30 -30 -5 -2 1 150 -55-150 Unit V V V A W ℃ ℃ 1. Emitter 2. Base 3. Collector TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off c.

A1273 : .

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A1275 : .

A1279 : ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -5 -8 30 150 -55~150 UNIT V V V A A W IC ICM PC Tj Tstg SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHA.

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