Ordering number:EN3093
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1707/2SC4487
High-Current Switching Applications
Features
· Adoption of FBET, MBIT processes.
· Large current capacity, wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm 2064
[2SA1707/2SC4487]
( ) : 2SA1707
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Sy...