■■APPLICATION:GENERAL PURPOSE APPLICATION.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC PC TJ Tstg
-30 V -25 V -5 V -100 mA 300 mW 150 ℃ ﹣55~150 ℃
A1309
—
PNP silicon —
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
400
VCE= -10V,Ic= -2mA
Collector Cut-off Current
ICBO
-0.
1 µA VCB= -30V,IE=0
Emitter Cut-off Current
IEBO
-0.
1 µA VEB= -5V,Ic=0
Collector-Base Breakdown Voltage BVCBO -30
V Ic= -0.
1mA,IE=0
Colle...