Midium Power
Transistors (-30V / -3A)
2SAR552P
Structure
PNP Silicon epitaxial planar
transistor
Features 1) Low saturation voltage, typically
VCE (sat) = -0.
4V (Max.
) (IC / IB= -1A / -50mA) 2) High speed switching
Applications Driver
Packaging specifications
Package Type Code
Basic ordering unit (pieces) 2SAR552P
Taping T100 1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3 Tj Tstg
-30 -30 -6 -3 -6 0.
5 2 150 -55 to 150
*1 Pw=10ms, Single Pulse
*...