Midium Power
Transistors (-30V / -5A)
2SAR542D
Structure
PNP Silicon epitaxial planar
transistor
Features 1) Low saturation voltage
VCE (sat) = -0.
4V (Max.
) (IC / IB= -2A / -100mA) 2) High speed switching
Applications Driver
Dimensions (Unit : mm)
CPT3
(SC-63) SOT-428
(1) Base (2) Collector (3) Emitter
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
CPT3 TL
2500
Inner circuit (Unit : mm)
(3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC
Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *...