Midium Power Transistors (-30V / -5A) 2SAR542P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.
4V (Max.
) (IC / IB= -2A / -100mA) 2) High speed switching  Applications Driver  Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR542P   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -30 -30 -6 -5 -10 0.
5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *...

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