SS8 550
TRANSISTOR(
PNP)
FEATURES High Collector Current Complementary to SS8050
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-1.
5
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V A
mW ℃/W
℃ ℃
1.
BASE 2.
EMITTER 3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdow...