Freescale Semiconductor Technical Data
Document Number: MRF8S18210WHS Rev.
0, 4/2012
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.
=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.
,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.
e9C: dVliBpDpD@in=g03,.
00C1hV%aonltPnsre,olIDbaQb=ility on CCDF.
Frequency 1930 MHz 1960 MHz 1995 MHz
Gps (dB) 17.
8 17.
8 18.
1
ηD Output PAR ACPR
(%)
(dB)
(dBc)
29.
2 7.
0 --34.
2
28.
2 7.
0 --34.
4
27.
6 7.
1 --34.
3
• Capable of Handling 1...