Freescale Semiconductor Technical Data
Document Number: MRF8S18260H Rev.
1, 2/2012
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t--.
=8C4a7rM4riHWerzaW,ttIsn--pCAuDvtgMS.
,iAgIQnPaeMlrPfaoAgrRnmita=und7ce.
e5C: dVliBpDpD@in=g03,.
00C1hV%aonltPnsre,olIDbaQb=ility on CCDF.
Frequency
Gps (dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
1805 MHz
17.
9 31.
6
6.
0 --35.
0
1840 MHz
17.
9 31.
9
6.
0 --36.
0
1880 MHz
17.
9 32.
5
5.
9 --36.
0
• Cap...