| Part Number | STF19NM50N |
| Manufacturer | STMicroelectronics |
| Title | N-channel Power MOSFETs |
| Description | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates ... |
| Features |
Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N
RDS(on) max 0.25 Ω
ID 14 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ' 7$% * 6 Description These devices are N-channel Power MOSFETs... |
| File Size | 352.04KB |
| Datasheet |
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STF19NM50N : isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 14 A IDM Pulse Drain Current 56 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal.