TOSHIBA
Transistor Silicon
PNP Epitaxial Type
2SA2070
High-Speed Switching Applications DC-DC Converter Applications
2SA2070
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = -0.
1 A) • Low collector-emitter saturation voltage: VCE (sat) =- 0.
20 V (max) • High-speed switching: tf = 70 ns (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC (Note 1)
Tj Tstg
−50 −50 −7 −1.
0 −2.
0 −0.
1 1.
0 2.
0 150 −55 to 150
V V V
A
A
W
°C °...