INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.
) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.
5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649
APPLICATIONS
·Designed for series
regulator and general purpose
applications.
.
iscsemi.
cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
wwwVCBO
Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous Collector Power Dissi...